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| BAT 18 Silicon RF Switching Diode q q BAT 18 ... Low-loss VHF/UHF switch above 10 MHz Pin diode with low forward resistance Type BAT 18 BAT 18-04 Marking A2 AU Ordering Code Pin Configuration Q62702-A787 Q62702-A938 Package1) SOT 23 BAT 18-05 AS Q62702-A940 BAT 18-06 AT Q62702-A942 Maximum Ratings per Diode Parameter Reverse voltage Forward current Operating and storage temperature range Thermal Resistance Junction - ambient Rth JA Symbol VR IF Top Tstg Values 35 100 Unit V mA - 55 ... + 150 C 450 K/W 1) 2) For detailed information see chapter Package Outlines. Package mounted on alumina 15 mm x 16.7 mm x 0.7 mm. Semiconductor Group 1 07.94 BAT 18... Electrical Characteristics per Diode at TA = 25 C, unless otherwise specified. Parameter Forward voltage IF = 100 mA Reverse current VR = 20 V VR = 20 V, TA = 60 C Diode capacitance , VR = 20 V f = 1 MHz Forward resistance IF = 5 mA, f = 100 MHz Series inductance Symbol min. VF IR - - CT rf LS - - - - - 0.75 0.4 2 20 200 1 0.7 - pF nH - Values typ. 0.38 max. 1.2 V nA Unit Diode capacitance CT = f (VR) f = 1 MHz Forward resistance rf = f (IF) f = 100 MHz Semiconductor Group 2 |
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